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Part Number
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EIA1616-8P-2 |
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Manufacturer
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Excelics Semiconductor |
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Description
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16.2-16.4GHz 8-Watt Internally Matched Power FET |
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Published
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Feb 17, 2011 |
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Detailed Description
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EIA1616-8P-2
UPDATED 11/09/06
16.2-16.4GHz 8-Watt Internally Matched Power FET
FEATURES
• • • • • • • 16.2– 16.4GHz Ba...
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Datasheet
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EIA1616-8P-2
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Overview
EIA1616-8P-2
UPDATED 11/09/06
16.
2-16.
4GHz 8-Watt Internally Matched Power FET
FEATURES
• • • • • • • 16.
2– 16.
4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.
0 dBm Output Power at 1dB Compression 6.
0 dB Min.
Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH
EIA1616-8P-2
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1
Output Power at 1dB Compression f = 16.
2-16.
4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 16.
2-16.
4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain Flatness f = 16.
2-16.
4GHz VDS = 8 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Comp...
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