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EIA1616-8P-2

Excelics Semiconductor
Part Number EIA1616-8P-2
Manufacturer Excelics Semiconductor
Description 16.2-16.4GHz 8-Watt Internally Matched Power FET
Published Feb 17, 2011
Detailed Description EIA1616-8P-2 UPDATED 11/09/06 16.2-16.4GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 16.2– 16.4GHz Ba...
Datasheet PDF File EIA1616-8P-2 PDF File

EIA1616-8P-2
EIA1616-8P-2

Overview
EIA1616-8P-2 UPDATED 11/09/06 16.
2-16.
4GHz 8-Watt Internally Matched Power FET FEATURES • • • • • • • 16.
2– 16.
4GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +39.
0 dBm Output Power at 1dB Compression 6.
0 dB Min.
Power Gain at 1dB Compression 30% Power Added Efficiency Non-Hermetic Metal Flange Package 100% Tested for DC, RF, and RTH EIA1616-8P-2 ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 16.
2-16.
4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain at 1dB Compression f = 16.
2-16.
4GHz VDS = 8 V, IDSQ ≈ 2200mA Gain Flatness f = 16.
2-16.
4GHz VDS = 8 V, IDSQ ≈ 2200mA Power Added Efficiency at 1dB Compression VDS = 8 V, IDSQ ≈ 2200mA f = 16.
2-16.
4GHz Drain Current at 1dB Compression Saturated Drain Current Pinch-off Voltage Thermal Resistance 2 Caution! ESD sensitive device.
MIN 38.
0 6.
0 TYP 39.
0 7.
0 MAX UNITS dBm dB ±0.
6 30 2600 4000 -1.
0 3.
5 3200 6000 -2.
5 4.
0 o dB % mA mA V C/W f = 16.
...


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