Part Number
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HY5S5B6GLFP-H |
Manufacturer
|
Hynix Semiconductor |
Description
|
256Mbit (16Mx16bit) Mobile SDR Memory |
Published
|
Mar 2, 2011 |
Detailed Description
|
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of 256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
...
|
Datasheet
|
HY5S5B6GLFP-H
|
Overview
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O
Specification of 256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Apr.
2006 1
256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series
11
Document Title
4Bank x 4M x 16bits Synchronous DRAM
Revision History
Revision No.
0.
1 Initial Draft 1.
Changed 166MHz IDD1 : 60mA -- 75mA 133MHz IDD1 : 55mA -- 65mA 105MHz IDD1 : 50mA -- 55mA 2.
Remove CL2 operation (Page 13 to 14) 1.
Release History Dr...
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