DatasheetsPDF.com

HY5S5B6GLFP-SE

Hynix Semiconductor
Part Number HY5S5B6GLFP-SE
Manufacturer Hynix Semiconductor
Description 256Mbit (16Mx16bit) Mobile SDR Memory
Published Mar 2, 2011
Detailed Description 256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array ...
Datasheet PDF File HY5S5B6GLFP-SE PDF File

HY5S5B6GLFP-SE
HY5S5B6GLFP-SE

Overview
256MBit MOBILE SDR SDRAMs based on 4M x 4Bank x16 I/O Specification of 256M (16Mx16bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x16 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Apr.
2006 1 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series 11 Document Title 4Bank x 4M x 16bits Synchronous DRAM Revision History Revision No.
0.
1 Initial Draft 1.
Changed 166MHz IDD1 : 60mA --> 75mA 133MHz IDD1 : 55mA --> 65mA 105MHz IDD1 : 50mA --> 55mA 2.
Remove CL2 operation (Page 13 to 14) 1.
Release History Draft Date Feb.
2006 Remark Preliminary 0.
2 Mar.
2006 Preliminary 1.
0 Apr.
2006 Final Rev 1.
0 / Apr.
2006 2 256Mbit (16Mx16bit) Mobile SDR Memory HY5S5B6GLF(P)-xE Series 11 DESCRIPTION The Hynix HY5S5B6GLF(P) is suited for non-PC application which use the batteries such as PDAs, 2.
5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.
The Hynix 256M Mobile SDRAM is 268,435,456-bit CMOS Mobile Synchronous DRAM(Mobile SDR), ideally suited for the main memory applications which requires large memory density and high bandwidth.
It is organized as 4banks of 4,194,304x16.
Mobile SDRAM is a type of DRAM which operates in synchronization with input clock.
The Hynix Mobile SDRAM latch each control signal at the rising edge of a basic input clock (CLK) and input/output data in synchronization with the input clock (CLK).
The address lines are multiplexed with the Data Input/ Output signals on a multiplexed x16 Input/ Output bus.
All the commands are latched in synchronization with the rising edge of CLK.
The Mobile SDRAMs provides for programmable read or write Burst length of Programmable burst lengths: 1, 2, 4, 8 locations or full page.
An AUTO PRECHARGE function may be enabled to provide a self-timed row precharge that is initiat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)