PROCESS
Small Signal MOSFET
Transistor
N- Channel Enhancement-Mode
Transistor Chip
CP324
PROCESS DETAILS Process Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 33,500 PRINCIPAL DEVICE TYPES 2N7002 EPITAXIAL PLANAR 21.
65 x 21.
65 MILS 9.
0 MILS 5.
5 x 5.
5 MILS 5.
9 x 13.
8 MILS Al - 30,000Å Au - 12,000Å
BACKSIDE DRAIN
R3 (22-March 2010)
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PROCESS
CP324
Typical Electrical Characteristics
R3 (22-March 2010)
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