DatasheetsPDF.com

CP302-MPSH10

Part Number	CP302-MPSH10
Manufacturer	Central Semiconductor
Description	NPN - RF Transistor Die
Published	Jun 7, 2018
Detailed Description	w w w. c e n t r a l s e m i . c o m CP302-MPSH10 NPN - RF Transistor Die 50mA, 25 Volt The CP302-MPSH10 is a silicon ...
Datasheet	CP302-MPSH10 PDF File

Overview

w w w.
c e n t r a l s e m i .
c o m CP302-MPSH10 NPN - RF Transistor Die 50mA, 25 Volt The CP302-MPSH10 is a silicon NPN RF transistor designed for low noise UHF/VHF ampliﬁer and high output oscillator applications.
MECHANICAL SPECIFICATIONS: Die Size 14.
5 x 14.
5 MILS B Die Thickness 9.
0 MILS Base Bonding Pad Size 2.
3 x 2.
3 MILS Emitter Bonding Pad Size 2.
5 x 2.
3 MILS Top Side Metalization Al – 30,000Å E Back Side Metalization Au – 18,000Å Wafer Diameter 4 INCHES Gross Die Per Wafer 53,730 BACKSIDE COLLECTOR R2 MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Operating and Storage Junction Temperature SYMBOL VCBO VCEO VEBO IC TJ, Tstg 30 25 3.
0 50 -65 to +150 UNITS V V V mA °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=25V IEBO VEB=2.
0V BVCBO IC=100µA 30 BVCEO IC=1.
0mA 25 BVEBO IE=10µA 3.
0 VCE(SAT) IC...

Similar Datasheet

CP302-MPSH10 NPN - RF Transistor Die - Central Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)