DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SJ449
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SJ449 is P-Channel MOS Field Effect
Transistor designed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters) 10.
0 ±0.
3 3.
2 ±0.
2 4.
5 ±0.
2 2.
7 ±0.
2
FEATURES
• Low On-Resistance
RDS(on) = 0.
8 Ω MAX.
(@ VGS = –10 V, ID = –3.
0 A)
15.
0 ±0.
3 12.
0 ±0.
2 13.
5 MIN.
• Low Ciss Ciss = 1040 pF TYP.
• High Avalanche Capability Ratings • Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) –250
m 30 m 6.
0 m 24
V V A A W W ˚C A mJ
0.
7 ±0.
1 2.
54
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