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J464

Toshiba Semiconductor
Part Number J464
Manufacturer Toshiba Semiconductor
Description 2SJ464
Published May 5, 2014
Detailed Description 2SJ464 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ464 Chopper Regulator, DC-DC Converter...
Datasheet PDF File J464 PDF File

J464
J464

Overview
2SJ464 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) 2SJ464 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • • 4-V gate drive Low drain-source ON resistance: RDS (ON) = 64 mΩ (typ.
) High forward transfer admittance: |Yfs| = 15 S (typ.
) Low leakage current: IDSS = −100 μA (max) (VDS = −100 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −100 −100 ±20 −18 −72 45 937 −18 4.
5 150 −55~150 Unit V V V A W mJ A mJ °C °C JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range Weight: 1.
9 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 2.
78 62.
5 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 3.
56 mH, RG = 25 Ω, IAR = −18 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensi...


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