BFU760F
NPN wideband silicon germanium RF
transistor
Rev.
1 — 29 April 2011 Product data sheet
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Product profile
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1 General description
NPN silicon germanium microwave
transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.
20, IEC/ST 61340-5, JESD625-A or equivalent standards.
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2 Features and benefits
Low noise high linearity RF
transistor High maximum output third-order intercept point 32 dBm at 1.
8 GHz 110 GHz fT silicon germanium technology
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3 Applica...