Part Number
|
IXFN20N120P |
Manufacturer
|
IXYS Corporation |
Description
|
Polar Power MOSFET HiPerFET |
Published
|
May 13, 2011 |
Detailed Description
|
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VG...
|
Datasheet
|
IXFN20N120P
|
Overview
PolarTM Power MOSFET HiPerFETTM
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md
www.
DataSheet4U.
net
IXFN20N120P
VDSS ID25
RDS(on) trr
= = ≤ ≤
1200V 20A 570mΩ 300ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1200 1200 ± 30 ± 40 20 50 10 1 20 595 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A J V/ns W °C °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D G = Gate S = Source D = Drain
Either Source ter...
Similar Datasheet