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IXFN20N120

IXYS Corporation
Part Number IXFN20N120
Manufacturer IXYS Corporation
Description HiPerFET Power MOSFETs
Published May 13, 2011
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr...
Datasheet PDF File IXFN20N120 PDF File

IXFN20N120
IXFN20N120

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D = 1200 V = 20 A RDS(on) = 0.
75 Ω ≤ 300 ns trr G S S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.
DataSheet4U.
net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ≤ 150°C, RG = 2 Ω TC= 25°C Maximum Ratings 1200 1200 ± 30 ± 40 20 80 10 40 2 5 780 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C V~ V~ miniBLOC, SOT-227 B (...


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