Part Number
|
IXFN44N80 |
Manufacturer
|
IXYS Corporation |
Description
|
Power MOSFET |
Published
|
May 13, 2011 |
Detailed Description
|
HiPerFETTM Power MOSFETs Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol V DSS ...
|
Datasheet
|
IXFN44N80
|
Overview
HiPerFETTM Power MOSFETs Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL
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DataSheet4U.
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IXFN 44N80
VDSS ID25
RDS(on)
= 800 V = 44 A = 0.
165 W
D
G S
S
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 700 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C V~ V~
miniBLOC, SOT-227 B (IXFN) E153432
S G
S D
G =...
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