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IXFN44N80

IXYS Corporation
Part Number IXFN44N80
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol V DSS ...
Datasheet PDF File IXFN44N80 PDF File

IXFN44N80
IXFN44N80

Overview
HiPerFETTM Power MOSFETs Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL www.
DataSheet4U.
net IXFN 44N80 VDSS ID25 RDS(on) = 800 V = 44 A = 0.
165 W D G S S Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ± 20 ± 30 44 176 44 64 4 5 700 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features • International standard packages isolation • miniBLOC, with Aluminium nitride • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Swi...


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