Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 8N50PM VDSS ID25 trr RDS(on) = 500 V = 4.
4 A ≤ 0.
8 Ω ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md www.
DataSheet4U.
net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 4.
4 14 8 20 300 10 42 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ mJ V/ns W °C °C °C °...

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