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IXFP8N50PM

IXYS Corporation
Part Number IXFP8N50PM
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 13, 2011
Detailed Description Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode...
Datasheet PDF File IXFP8N50PM PDF File

IXFP8N50PM
IXFP8N50PM

Overview
Preliminary Technical Information PolarHVTMHiPerFET Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFP 8N50PM VDSS ID25 trr RDS(on) = 500 V = 4.
4 A ≤ 0.
8 Ω ≤ 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md www.
DataSheet4U.
net Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 18 Ω TC = 25° C Maximum Ratings 500 500 ±30 ±40 4.
4 14 8 20 300 10 42 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C OVERMOLDED TO-220 (IXTP.
.
.
M) OUTLINE G Isolated Tab D S G = Gate S = Source D = Drain 1.
6 mm (0.
062 in.
) from case for 10 s Plastic body for 10 s Mounting torque 300 260 Features l 1.
13/10 Nm/lb.
in.
4 g l l Weight l Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVD...


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