Part Number
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3VD186700YL |
Manufacturer
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Silan Microelectronics |
Description
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HIGH VOLTAGE MOSFET CHIPS |
Published
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May 19, 2011 |
Detailed Description
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3VD186700YL
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186700YL is a High voltage N-Channel enhancement mode...
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Datasheet
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3VD186700YL
|
Overview
3VD186700YL
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70.
The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
¾ ¾ Die size: 1.
96mm*1.
78mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
¾
...
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