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3VD186700YL

Part Number	3VD186700YL
Manufacturer	Silan Microelectronics
Description	HIGH VOLTAGE MOSFET CHIPS
Published	May 19, 2011
Detailed Description	3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode...
Datasheet	3VD186700YL PDF File

Overview

3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology.
¾ ¾ ¾ ¾ ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode The chips may packaged in TO-251-3L type and the typical equivalent product is 1N70.
The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
¾ ¾ Die size: 1.
96mm*1.
78mm.
Chip Thickness: 300±20μm.
Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY ¾ ...

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3VD186700YL HIGH VOLTAGE MOSFET CHIPS - Silan Microelectronics

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