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Part Number
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IXFR180N07 |
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Manufacturer
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IXYS Corporation |
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Description
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HiPerFET Power MOSFETs |
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Published
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May 23, 2011 |
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Detailed Description
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HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary da...
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Datasheet
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IXFR180N07
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Overview
HiPerFETTM Power MOSFETs IXFR 180N07 TM ISOPLUS247 (Electrically Isolated Back Surface)
Single MOSFET Die
Preliminary data sheet
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight
www.
DataSheet4U.
net
VDSS = 70 V ID25 = 180 A RDS(on) = 6 mW trr £ 250 ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C (MOSFET chip capability) External lead (current limit) TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 70 70 ±20 ±30 180 76 720 180 60 3 5 400 -55 .
.
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+150 150 -55 .
.
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+150 V V V V A A A A mJ J V/ns W °C °C °C °C V~ g
I...
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