Part Number
|
IXFR58N20Q |
Manufacturer
|
IXYS Corporation |
Description
|
HiPerFET Power MOSFETs |
Published
|
May 23, 2011 |
Detailed Description
|
HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mod...
|
Datasheet
|
IXFR58N20Q
|
Overview
HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL
net
VDSS = = ID25 RDS(on) =
200 V 50 A 40 mΩ
trr ≤ 200 ns
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 200 200 ± 20 ± 30 50 232 58 30 1.
0 5 300 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A mJ J V/ns W °C °C °C °...
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