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IXFR58N20Q

Part Number	IXFR58N20Q
Manufacturer	IXYS Corporation
Description	HiPerFET Power MOSFETs
Published	May 23, 2011
Detailed Description	HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mod...
Datasheet	IXFR58N20Q PDF File

Overview

HiPerFETTM Power MOSFETs IXFR 58N20Q ISOPLUS247TM Q-Class (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL www.
DataSheet4U.
net VDSS = = ID25 RDS(on) = 200 V 50 A 40 mΩ trr ≤ 200 ns Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, Note 1 TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 200 200 ± 20 ± 30 50 232 58 30 1.
0 5 300 -55 .
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+150 150 -55 .
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+150 V V V V A A A mJ J V/ns W °C °C °C °...

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IXFR58N20Q HiPerFET Power MOSFETs - IXYS Corporation

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