Part Number
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IXFB82N60P |
Manufacturer
|
IXYS Corporation |
Description
|
PolarHV HiPerFET Power MOSFET |
Published
|
May 30, 2011 |
Detailed Description
|
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB 82N60P
VDSS = 600...
|
Datasheet
|
IXFB82N60P
|
Overview
PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFB 82N60P
VDSS = 600 V ID25 = 82 A RDS(on) ≤ 75 mΩ ≤ 200 ns trr
Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 600 600 ±30 ±40 82 75 200 82 100 5 20 1250 -55 .
.
.
+150 150 -55 .
.
.
+150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb g
PLUS264TM (IXFB)
G D S
(TAB)
G =...
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