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IXFB82N60P

IXYS Corporation
Part Number IXFB82N60P
Manufacturer IXYS Corporation
Description PolarHV HiPerFET Power MOSFET
Published May 30, 2011
Detailed Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 82N60P VDSS = 600...
Datasheet PDF File IXFB82N60P PDF File

IXFB82N60P
IXFB82N60P

Overview
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFB 82N60P VDSS = 600 V ID25 = 82 A RDS(on) ≤ 75 mΩ ≤ 200 ns trr Symbol VDSS VDGR VGSS VGSM ID25 IDRMS IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 600 600 ±30 ±40 82 75 200 82 100 5 20 1250 -55 .
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+150 150 -55 .
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+150 V V V V A A A A mJ J V/ns W °C °C °C °C °C N/lb g PLUS264TM (IXFB) G D S (TAB) G =...


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