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Part Number
|
IXFX20N120P |
|
Manufacturer
|
IXYS Corporation |
|
Description
|
Power MOSFET |
|
Published
|
May 30, 2011 |
|
Detailed Description
|
PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK20N120P IXFX20N120P...
|
|
Datasheet
|
IXFX20N120P
|
Overview
PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK20N120P IXFX20N120P
D G
S
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings
1200
V
1200
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
20
A
50
A
10
A
1
J
IS IDM, VDD VDSS, TJ 150C TC = 25C
15
780
-55 .
.
.
+150 150
-55 .
.
.
+150
V/ns
W
C C C
Maximum Lead Temperature for Soldering
300
°C
1.
6 mm (0.
062in.
) from Case for 10s
260
°C
Mounting Torque (TO-264) Mounting Force (PLUS247)
1.
13...
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