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IXFX20N120P

IXYS Corporation
Part Number IXFX20N120P
Manufacturer IXYS Corporation
Description Power MOSFET
Published May 30, 2011
Detailed Description PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P...
Datasheet PDF File IXFX20N120P PDF File

IXFX20N120P
IXFX20N120P

Overview
PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK20N120P IXFX20N120P D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1200 V 1200 V  30 V  40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C 20 A 50 A 10 A 1 J IS  IDM, VDD  VDSS, TJ  150C TC = 25C 15 780 -55 .
.
.
+150 150 -55 .
.
.
+150 V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.
6 mm (0.
062in.
) from Case for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.
13/10 20.
.
120 /4.
5.
.
27 Nm/lb.
in N/lb TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
1200 V 3.
5 6.
5 V 200 nA 50 A 5 mA 570 m VDSS = ID25 = RDS(on)  trr  1200V 20A 570m 300ns TO-264 (IXFK) G D S Tab PLUS247 (IXFX) G D S Tab G = Gate D = Drain S = Source Tab = Drain Features  Fast Intrinsic Diode  Dynamic dv/dt Rating  Avalanche Rated  Low RDS(ON) and QG  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  Discharger Circuits in Lesers Pulsers, Spark Igniters, RF Generators  High Voltage Pulse Power Supplies  AC and DC Motor Drives  High Speed Power Switching Application © 2019 IXYS CORPORATION,All rights reserved DS99854C(12/19) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs VDS = 20V, ID = 0.
5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz RGi Gate Input Resistance td(on) tr td(off) tf Resistive Switching Times VGS = 10V,...


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