Part Number
|
IXFK220N17T2 |
Manufacturer
|
IXYS Corporation |
Description
|
GigaMOS TrenchT2 HiperFET Power MOSFET |
Published
|
May 30, 2011 |
Detailed Description
|
Advance Technical Information
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fas...
|
Datasheet
|
IXFK220N17T2
|
Overview
Advance Technical Information
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK220N17T2 IXFX220N17T2
RDS(on) ≤ ≤ trr
TO-264 (IXFK)
VDSS ID25
= =
170V 220A 6.
3mΩ 140ns
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
Maximum Ratings 170 170 ± 20 ± 30 220 160 550 110 2 1250 20 -55 .
.
.
+175 175 -55 .
.
.
+175 V V V V A A A A J W V/ns °C °C °C °...
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