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IXFK220N17T2

Part Number	IXFK220N17T2
Manufacturer	IXYS Corporation
Description	GigaMOS TrenchT2 HiperFET Power MOSFET
Published	May 30, 2011
Detailed Description	Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fas...
Datasheet	IXFK220N17T2 PDF File

Overview

Advance Technical Information GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK220N17T2 IXFX220N17T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 170V 220A 6.
3mΩ 140ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 170 170 ± 20 ± 30 220 160 550 110 2 1250 20 -55 .
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+175 175 -55 .
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+175 V V V V A A A A J W V/ns °C °C °C °...

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IXFK220N17T2 GigaMOS TrenchT2 HiperFET Power MOSFET - IXYS Corporation

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