isc Silicon
PNP Power
Transistor
2SA1389
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min) ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High frequency power amplifiers ·Audio power amplifiers ·Switching
regulators ·DC-DC converters
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-160
V
-160
V
-7
V
-12
A
120
W
150
℃...