isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·Complement to Type 2SC3422 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low
speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5.
0
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Total Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-1
A
1.
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