isc Silicon
PNP Power
Transistor
DESCRIPTION ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SC3308 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-7.
0
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-8
A
1.
0 W
30
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA1308
i...