isc Silicon
PNP Power
Transistor
2SA1305
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3297 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Car radio and car stereo output stage applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-30
V
VCEO
Collector-Emitter Voltage
-30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
-0.
3
A
15
W
150
℃
Tstg
Stora...