isc Silicon
PNP Power
Transistor
2SA1262
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min.
) ·Low Collector Saturation Voltage
: VCE(sat)= -0.
6V(Max.
)@IC= -2A ·Complement to Type 2SC3179 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-60
V
VCEO Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-4
A
IB
Base Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
30
W
150
℃
Tstg
Stora...