isc Silicon
PNP Power
Transistor
2SA1250
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min) ·Low Collector Saturatioin Voltage-
: VCE(sat)= -1.
0V(Max.
)@ IC= -5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-200
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-2
A
30
W
175
℃
Tstg
Storage ...