isc Silicon
PNP Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·High Switching Speed ·Complement to Type 2SC2911 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-voltage switching and AF 100W predriver
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-140
mA
ICP
Collector Current-Pulse
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Te...