isc Silicon
PNP Power
Transistor
2SA663
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min.
) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -2.
3V(Max.
)@ IC= -5A ·Complement to Type 2SC793 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IE
Emitter Current-Continuous
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
7
A
60
W
150
℃
Tst...