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2SA608

CHINA BASE
Part Number 2SA608
Manufacturer CHINA BASE
Description PNP Transistor
Published Aug 9, 2017
Detailed Description 2SA608 PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications. The transistor...
Datasheet PDF File 2SA608 PDF File

2SA608
2SA608


Overview
2SA608 PNP Silicon Epitaxial Planar Transistor Low - Frequency General - Purpose Amplifier Applications.
The transistor is subdivided into two groups F and G according to its DC current gain.
Applications: ․Capable of being used in the low frequency to high frequency range.
Features: ․Large current capacity and wide ASO.
1.
Emitter 2.
Base 3.
Collector TO-92 Plastic Package Weight approx.
0.
19g Absolute Maximum Ratings (Ta = 25℃) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICP Ptot Tj TS Value 50 50 6 150 400 500 150 -55 to +150 Unit V V V mA mA mW OC OC Page 1 of 2 7/15/2011 Characteristics at Tamb=25 OC Parameter DC Current Gain at -VCE=6V, -IC=1mA Current Gain Group F G at -VCE=6V, -IC=0.
1mA Symbol hFE hFE hFE Collector Base Breakdown Voltage at -IC=10μA Collector Emitter Breakdown Voltage a...



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