isc Silicon
PNP Power
Transistor
2SA656
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -110V(Min.
) ·Complement to Type 2SC519 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier applications.
·Power switching applications.
·DC-DC converter applications.
·
Regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO Collector-Emitter Voltage
-110
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
Base Current
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-2
A
50
W
150
℃
Tstg
Storag...