Transistors
2SB0976 (2SB976)
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Silicon
PNP epitaxial planar type
For low-frequency output amplification For DC-DC converter For stroboscope ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Large collector current IC
0.
7±0.
1
Unit: mm
5.
0±0.
2 4.
0±0.
2
0.
7±0.
2 12.
9±0.
5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −27 −18 −7 −5 −8 0.
75 150 −55 to +150 Unit V V
1 2 3 0.
45+0.
15 –0.
1 2.
5+0.
6 –...