IDH02SG120
3rd Generation thinQ!TM SiC
Schottky Diode
Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation • Lowest Figure of Merit QC/IF
net
Product Summary V DC QC I F; T C 130 °C 1200 600 3.
2 7.
2 3 2 V nC A
PG-TO220-2
thinQ!TM 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH02SG120 Package PG-T...