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IDH02SG120

Infineon Technologies
Part Number IDH02SG120
Manufacturer Infineon Technologies
Description Schottky Diode
Published Jul 7, 2011
Detailed Description IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide...
Datasheet PDF File IDH02SG120 PDF File

IDH02SG120
IDH02SG120

Overview
IDH02SG120 3rd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior • High surge current capability • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Optimized for high temperature operation • Lowest Figure of Merit QC/IF www.
DataSheet4U.
net Product Summary V DC QC I F; T C< 130 °C 1200 600 3.
2 7.
2 3 2 V nC A PG-TO220-2 thinQ!TM 3G Diode designed for fast switching applications like: • SMPS e.
g.
; CCM PFC • Motor Drives; Solar Applications; UPS Type IDH02SG120 Package PG-TO220-2 Marking D02G120 Pin 1 C Pin 2 A Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.
6mm (0.
063 in.
) from case for 10s M3 and M3.
5 screws page 1 T j=25 °C VR= 0….
960 V T C=25 °C Value 2 15 13 90 1.
4 1.
1 1200 50 75 -55 .
.
.
175 260 60 Ncm 2009-09-04 V V/ns W °C A2s Unit A Surge non-repetitive forward current, I F,SM sine halfwave Non-repetitive peak forward current i ²t value Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Soldering temperature, wavesoldering only allowed at leads Mounting torque Rev.
2.
0 I F,max ∫i 2dt IDH02SG120 Parameter Symbol Conditions min.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA Thermal resistance, junction- ambient, leaded 2 62 K/W Values typ.
max.
Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage V DC VF I R=0.
05 mA, T j=25 °C I F=2 A, T j=25 °C I F=2 A, T j=150 °C Reverse current IR V R=1200 V, T j=25 °C V R=1200 V, T j=150 °C AC characteristics Total ...


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