Part Number
|
PTFA181001HL |
Manufacturer
|
Infineon Technologies |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Jul 11, 2011 |
Detailed Description
|
Preliminary PTFA181001GL PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMO...
|
Datasheet
|
PTFA181001HL
|
Overview
Preliminary PTFA181001GL PTFA181001HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz
net
Description
The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.
Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA181001GL* Package PG-63248-2 PTFA181001HL* Package PG-64248-2
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz...
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