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PTFA181001GL

Part Number	PTFA181001GL
Manufacturer	Infineon Technologies
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Jul 11, 2011
Detailed Description	Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMO...
Datasheet	PTFA181001GL PDF File

Overview

Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz www.
DataSheet4U.
net Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz band.
Features include input and output matching, and thermally-enhanced open-cavity packages with copper flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA181001GL* Package PG-63248-2 PTFA181001HL* Package PG-64248-2 Two-carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, ƒ = 1880 MHz...

Similar Datasheet

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PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET - Infineon Technologies
PTFA181001HL Thermally-Enhanced High Power RF LDMOS FET - Infineon Technologies

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