Part Number
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APT28GA60K |
Manufacturer
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Microsemi Corporation |
Description
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High Speed PT IGBT |
Published
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Jul 15, 2011 |
Detailed Description
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APT28GA60K
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved thro...
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Datasheet
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APT28GA60K
|
Overview
APT28GA60K
600V High Speed PT IGBT
POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved through leading technology silicon design and lifetime control processes.
A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies.
Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short net delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
®
TO-220
APT28GA60K
Single die IGBT
FEATURES
• Fast switching with low...
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