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APT28GA60BD15

Part Number	APT28GA60BD15
Manufacturer	Microsemi Corporation
Description	High Speed PT IGBT
Published	Jul 15, 2011
Detailed Description	APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mo...
Datasheet	APT28GA60BD15 PDF File

Overview

APT28GA60BD15 APT28GA60SD15 600V High Speed PT IGBT ® (B) D3PAK TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT.
Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes.
A reduced Eoff VCE(ON) tradeoff results in superior efﬁciency compared to other IGBT technologies.
Low G gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short www.
DataSheet4U.
net G C E delay times and simple gate drive.
The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
Combi (IGBT and Diode) C ...

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APT28GA60BD15 High Speed PT IGBT - Microsemi Corporation

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