SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : TFSV.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
C KDS166F SILICON EPITAXIAL PLANAR DIODE B B1 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL VRM VR IFM IO IFSM PD * Tj Tstg 1.
5 RATING 85 80 300 100 2 100 150 -55 150 UNIT V H Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range * : Unit rating.
Total rating=unit rating DIM A A1 B B1 C D H T MILLIMETERS _ 0.
05 1.
0 + _ 0.
05 0.
7 + _ 0.
05 1.
0 + _ 0.
05 0.
8 + 0.
35 _ 0.
05 0.
15 + 0.
38+0.
0...

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