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KDS160V

KEC
Part Number KDS160V
Manufacturer KEC
Description Silicon Diode
Published Mar 26, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small package : VSC. Low forward voltage. ...
Datasheet PDF File KDS160V PDF File

KDS160V
KDS160V

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small package : VSC.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature VRM VR IFM IO IFSM PD * Tj 85 80 300 100 2 100 150 Storage Temperature Range Tstg -55 150 * : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW CE DF KDS160V SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 21 B DIM MILLIMETERS A A 1.
4 +_ 0.
05 B 1.
0 +_ 0.
05 C 0.
6 +_ 0.
05 D 0.
28 +_0.
03 E 0.
5 +_ 0.
05 F 0.
12 +_ 0.
03 1.
ANODE 2.
CATHODE VSC Marking Type Name UF ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) VF(3) IR CT Reverse Recovery Time trr TEST CONDITION IF=1mA IF=10mA I...


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