SEMICONDUCTOR TECHNICAL DATA TV TUNING.
FEATURES High Capacitance Ratio Low Series Resistance KDV216E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 E CATHODE MARK B A GG MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V 2 D 1.
ANODE 2.
CATHODE F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10 ESC Marking Type Name V3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current IR VR=32V C1V VR=1V, f=1MHz Capacitance Capacitance Ratio C2V C25V C28V C1V/C28V ...

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