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KDV216E

KEC
Part Number KDV216E
Manufacturer KEC
Description VARIABLE CAPACITANCE DIODE
Published Aug 5, 2011
Detailed Description SEMICONDUCTOR TECHNICAL DATA TV TUNING. FEATURES High Capacitance Ratio Low Series Resistance KDV216E VARIABLE CAPACITA...
Datasheet PDF File KDV216E PDF File

KDV216E
KDV216E

Overview
SEMICONDUCTOR TECHNICAL DATA TV TUNING.
FEATURES High Capacitance Ratio Low Series Resistance KDV216E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 E CATHODE MARK B A GG MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 32 125 -55 125 UNIT V 2 D 1.
ANODE 2.
CATHODE F DIM A B C D E F G MILLIMETERS 1.
60 +_0.
10 1.
20 +_0.
10 0.
80 +_0.
10 0.
30+_ 0.
05 0.
60+_ 0.
10 0.
13+_ 0.
05 0.
20+_ 0.
10 ESC Marking Type Name V3 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Reverse Current IR VR=32V C1V VR=1V, f=1MHz Capacitance Capacitance Ratio C2V C25V C28V C1V/C28V ...


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