net SUU50N03-10P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (Ω) 0.
010 @ VGS = 10 V 0.
014 @ VGS = 4.
5 V ID (A)a 20 18 TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU50N03-10P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a TC = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TA = 25_C PD TJ, Tstg TA = 25_C TA = 100_C ID IDM IS Symbol VDS VGS Limit 30 20 20 14 100 20 71b 8.
3a...

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