DatasheetsPDF.com

SUU50N03-12P

Vishay Siliconix
Part Number SUU50N03-12P
Manufacturer Vishay Siliconix
Description N-Channel MOSFET
Published Aug 30, 2011
Detailed Description www.DataSheet4U.net SUU50N03-12P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D T...
Datasheet PDF File SUU50N03-12P PDF File

SUU50N03-12P
SUU50N03-12P

Overview
www.
DataSheet4U.
net SUU50N03-12P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET ID (A)a 17.
5 14.
5 rDS(on) (Ω) 0.
012 @ VGS = 10 V 0.
0175 @ VGS = 4.
5 V APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB G D S Top View Order Number: SUU50N03-12P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.
1 0 1 mH TC = 25_C TA = 25_C PD TJ, Tstg Conduction)a TA = 25_C TA = 100_C ID IDM IS IAS EAS Symbol VDS VGS Limit 30 20 17.
5 12.
4 40 5 30 45 46.
8 6.
5a --55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case Notes a.
Surface Mounted on FR4 Board, t ≤ 10 sec.
Document Number: 72429 S-31872—Rev.
A, 15-Sep-03 www.
vishay.
com t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 18 40 2.
6 Maximum 23 50 3.
2 Unit _C/ C/W 1 www.
DataSheet4U.
net SUU50N03-12P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source Drain Source On On-State State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.
5 V, ID = 15 A VDS = 15 V, ID = 20 A 15 0.
0138 40 0.
010 0.
012 0.
017 0.
0175 S Ω 30 1.
0 3.
0 100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transf...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)