net
SMD Type
MOS Field Effect
Transistors 2SJ360
SOT-89
+0.
1 4.
50-0.
1 +0.
1 1.
80-0.
1
MOSFET
Unit: mm
+0.
1 1.
50-0.
1
Features
+0.
1 2.
50-0.
1
RDS(on)=0.
55
(VGS=-4V,ID=-1.
0A)
Low leakage current :IDSS=-100
A
Max.
)(VDS=-60V)
+0.
1 0.
80-0.
1
High forward transfer admittance :|Yfs|=0.
9S(Typ.
)
1
+0.
1 0.
48-0.
1
2
3
+0.
1 0.
53-0.
1 +0.
1 0.
44-0.
1
+0.
1 2.
60-0.
1
+0.
1 4.
00-0.
1
Low on-state resistance
+0.
1 3.
00-0.
1
+0.
1 0.
40-0.
1
1.
Source Base 1.
2.
Drain Collector 2.
3.
Gate Emiitter 3.
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel tempera...